| 摘要 |
In a semiconductor device including a semiconductor substrate, and an n-channel type MOS transistor produced in the semiconductor substrate, the n-channel type MOS transistor includes a gate insulating layer formed on the semiconductor substrate and having a thickness of at most 1.6 nm, and a gate electrode layer on the gate insulating layer, and the gate electrode layer is composed of polycrystalline silicon which has an average grain size falling within a range between 10 nm and 150 nm in the vicinity of the gate insulating layer.
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