发明名称 |
PATTERN FORMING METHOD, PATTERN FORMED THEREBY, MOLD, PROCESSING APPARATUS, AND PROCESSING METHOD |
摘要 |
A pattern forming method includes a step of forming a pattern of a resist on a surface of a thin film formed on the base material; a step of forming a reverse layer on the pattern of the resist; a step of forming a reverse pattern, of the reverse layer complementary to the pattern of the resist by removing the resist after removing the reverse layer to expose a surface of the resist; a step of forming a hard mask layer including the thin film, on which the reverse layer is formed, by etching the thin film through the reverse pattern of the reverse layer as a mask; and a step of etching the base material through, as a mask, the hard mask layer on which the reverse layer remains or the hard mask layer on which the reverse layer has been removed.
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申请公布号 |
US2008292976(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080124492 |
申请日期 |
2008.05.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TERASAKI ATSUNORI;SEKI JUNICHI |
分类号 |
G03F1/08;B29C33/38;B29C59/02;G03F7/20;G03F7/26;G03F7/40;H01L21/027 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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