LIGHT-REFLECTIVE MASK, METHOD OF MAKING LIGHT-REFLECTIVE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To contribute to improvement in exposure accuracy of EUV exposure or the like by inhibiting degradation in surface flatness caused by reflective pattern formation or degradation in surface flatness in electrostatic chucking.

SOLUTION: A method of making a light-reflective mask includes a step (S3) of measuring flatness on the front face of a substrate having a reflective mask pattern formed on the front face and having a conductive film for electrostatic chucking formed on a rear face, and a step (S5) of selectively removing the conductive film to form an opening to attain the flatness of a desired value based on the measured flatness and varying an aperture ratio of the conductive film within a mask plane.

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