| 摘要 |
<p>The current application deals with the doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process. We will examine different variations and features of this method and process. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/ material.</p> |
