| 摘要 |
An etch process with a controlled critical dimension shrink is provided to etch an opening in a substrate layer with reduced critical dimensions. An etch process with a controlled critical dimension shrink includes the steps of: depositing a multi-layered mask on a substrate(105); lithographically defining an opening having a first CD in a photoresist(110); plasma-etching a BARC to form an opening smaller than the lithographically defined opening in the photoresist(125); etching an amorphous carbon layer to terminate a definition of the multi-layered mask(130); performing a main etch using the multi-layered mask having an opening with a reduced critical dimension from a polymerizing BARC etching(140); and removing all remaining layer of the multi-layered mask to finish the process(150).
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