发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device is provided to improve yield by sufficiently suppressing voids of an adhesive layer. A method for manufacturing a semiconductor device includes the steps of: preparing an adhesive adhesion semiconductor device(10) including a semiconductor device(1) and a film type adhesive(2) adhered to a part of at least surface of the semiconductor device; disposing the adhesive adhesion semiconductor device on a support member to contact the film type adhesive with the support member; and heating and compressing the film type adhesive so that a thickness of the film type adhesive becomes 1/10 ~ 1/2, thereby adhering the semiconductor device on the support member through the adhesive layer.
申请公布号 KR20080093394(A) 申请公布日期 2008.10.21
申请号 KR20080035341 申请日期 2008.04.16
申请人 NIPPON STEEL CHEMICAL CO., LTD. 发明人 AOYAMA TAKESHI;MATSUO TETSUYA;ANZAI MASARU
分类号 H01L21/603 主分类号 H01L21/603
代理机构 代理人
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