发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device is provided to improve yield by sufficiently suppressing voids of an adhesive layer. A method for manufacturing a semiconductor device includes the steps of: preparing an adhesive adhesion semiconductor device(10) including a semiconductor device(1) and a film type adhesive(2) adhered to a part of at least surface of the semiconductor device; disposing the adhesive adhesion semiconductor device on a support member to contact the film type adhesive with the support member; and heating and compressing the film type adhesive so that a thickness of the film type adhesive becomes 1/10 ~ 1/2, thereby adhering the semiconductor device on the support member through the adhesive layer.
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申请公布号 |
KR20080093394(A) |
申请公布日期 |
2008.10.21 |
申请号 |
KR20080035341 |
申请日期 |
2008.04.16 |
申请人 |
NIPPON STEEL CHEMICAL CO., LTD. |
发明人 |
AOYAMA TAKESHI;MATSUO TETSUYA;ANZAI MASARU |
分类号 |
H01L21/603 |
主分类号 |
H01L21/603 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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