| 摘要 |
<p>A patterning method is provided to reduce line edge roughness, and to improve dimensional stability of a pattern. A patterning method includes the steps of: (a) coating a substrate with a resist composition containing a resin which contains repeating units represented by the following formula(NGH-1), increases in polarity under an action of an acid, and decreases in solubility in a negative type developer; (b) performing exposure; and (c) performing developing using a negative type developer. In the formula, R_NGH1 represents a hydrogen atom or alkyl group, and each of R_NGH2 to R_NGH4 represents a hydrogen atom or hydroxyl group, with the proviso that at least one of R_NGH2 to R_NGH4 represents a hydroxyl group.</p> |
