METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT EMITTING DIODE, LASER DIODE, AND METHODS OF FABRICATING THE DIODES

摘要

There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can achieve a reduced n type carrier density. The method of producing a group III-V compound semiconductor is a method of producing the compound semiconductor by metal organic chemical vapor deposition employing a material containing a group III element. Initially the step of preparing a seed substrate is performed. Then the step of growing a group III-V compound semiconductor on the seed substrate is performed by employing as a group III element-containing material an organic metal containing at most 0.01 ppm of silicon, at most 10 ppm of oxygen and less than 0.04 ppm of germanium.