| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory element which can be easily and highly integrated and has high reliability, and a manufacturing method thereof. SOLUTION: This non-volatile memory element has a plurality of first semiconductor layers, a plurality of second semiconductor layers, a plurality of first storage nodes and a plurality of first control gate electrodes. The first semiconductor layers are laminated on a substrate, the second semiconductor layers are interposed between the first semiconductor layers and recessed from one-side ends of the first semiconductor layers so as to limit a plurality of first trenches between the first semiconductor layers, the first storage nodes are provided on surfaces of the second semiconductor layers in the first trenches, and the first control gate electrodes are formed on the first storage nodes so as to fill the first trenches. COPYRIGHT: (C)2009,JPO&INPIT
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