PATTERN FORMING METHOD, PATTERN FORMING PROGRAM, MANUFACTURING METHOD OF MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method with which a fine pattern formed by applying a side wall leaving process is efficiently and easily formed.

SOLUTION: An endmost pattern 3a among a plurality of integrated circuit patterns 3 is selected. A first closest pattern 3b which is closest to the endmost pattern 3a is extracted from the respective integrated circuit patterns 3. A pattern 4 is generated which is circumscribed with the endmost pattern 3a and first closest pattern 3b. A non-overlap pattern 5 excluding portions overlapping with the endmost pattern 3a and first closest pattern 3b is generated from the circumscribed pattern 4. A second closest pattern 6 which is closest to the non-overlap pattern 5 is extracted from the respective integrated circuit patterns 3. Steps from the one of extracting the first closest pattern 3b from a second layer to the one of extracting the second closest pattern 6 are repeated until all the data of the respective integrated circuit patterns 3 are completely followed.

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