发明名称 MEMORY CIRCUIT ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
摘要 In a memory circuit arrangement and fabrication method, the parts of the memory circuit arrangement are situated on two different substrates. An integrated memory cell array is situated on one substrate. An integrated control circuit that controls access to the memory cells is situated on the other (logic circuit) substrate. The control circuit controls sequences when reading, writing or erasing content of a memory cell. The logic circuit substrate also contains a CPU and encryption coprocessor. The memory circuit contains a sense amplifier, with the aid of which the memory state of a memory cell can be determined, and a decoding circuit that selects a word or bit line.
申请公布号 US2008239863(A1) 申请公布日期 2008.10.02
申请号 US20080135687 申请日期 2008.06.09
申请人 GRUBER WOLFGANG;KAKOSCHKE RONALD;SCHWEIZER THOMAS;WEGERTSEDER DOMINIK 发明人 GRUBER WOLFGANG;KAKOSCHKE RONALD;SCHWEIZER THOMAS;WEGERTSEDER DOMINIK
分类号 G11C8/10;G11C5/02;H01L25/18 主分类号 G11C8/10
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