| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve the mobility of a channel and current driving force by performing a counter doping with N-type impurity into a P-type poly silicon layer. An isolation layer(220) is formed on a semiconductor substrate(210). The isolation layer defines an NMOS forming region and limits an active region. The active region of the semiconductor substrate is etched to form a groove defining a gate forming region. An impurity region is formed in the substrate surface at both sides of the groove. A gate dielectric(230) is formed on the whole surface including the groove. A P-type poly silicon layer(240) is deposited on the gate dielectric so that the groove on which the gate dielectric is formed is gap-filled. A counter doping is performed with N-type impurity in the P-type poly silicon layer. A gate metal layer(250) and a gate hard mask layer(260) are formed on the P-type poly silicon layer where the counter doping is performed.</p> |
