发明名称 |
THIN-FILM LAMINATE, AND ORGANIC TRANSISTOR USING THE SAME |
摘要 |
<p>[PROBLEMS] To provide a thin-film laminate, which can bring a film structure, impossible to ensure evenness due to the formation of a dendritic structure in the conventional semiconductor formation, to a flat film, by forming a laminate structure of a first organic layer, which has been controlled on a molecular layer thickness level, and a second organic layer or an inorganic ultrathin insulating layer different from the first organic layer. [MEANS FOR SOLVING PROBLEMS] A thin-film laminate characterized by comprising first organic thin films and second organic thin films or inorganic insulating thin films which have been alternatively stacked on top of each other a plurality of times.</p> |
申请公布号 |
WO2008117579(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
WO2008JP52394 |
申请日期 |
2008.02.14 |
申请人 |
NATIONAL UNIVERSITY CORPORATION UNIVERSITY OF TOYAMA;OKADA, HIROYUKI;NAKA, SHIGEKI |
发明人 |
OKADA, HIROYUKI;NAKA, SHIGEKI |
分类号 |
B32B9/00;H01L27/146;H01L29/786;H01L51/05;H01L51/30;H01L51/50 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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