| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride system compound semiconductor which can remarkably improve light extraction efficiency and has an uneven structure, and its manufacturing method. <P>SOLUTION: A plurality of boride single crystalline layer parts 14 expressed by a chemical formula XB<SB>2</SB>(wherein X is one or more kinds of element selected from Zr, Ti and Hf) are formed in one major surface 11 of a p-type gallium nitride system compound semiconductor layer 8c. An AlGaInN single crystalline layer 15a of Ga polarity is formed on the one major surface 11 by forming an AlGaInN single crystalline layer 15 expressed by a chemical formula Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N (wherein 0≤x≤1, 0≤y≤1, 0≤x+y≤1) covering the one major surface 11 and a plurality of boride single crystalline layer parts 14. An AlGaInN single crystalline layer 15b of N polarity is formed on a plurality of boride single crystalline layer parts 14 each, and then an AlGaInN single crystalline layer 15b of N polarity is selectively etched and removed, thus forming an uneven structure. <P>COPYRIGHT: (C)2009,JPO&INPIT |
