| 摘要 |
PROBLEM TO BE SOLVED: To set a plurality of threshold voltages without depending upon a gate insulating film, a channel or the like in a semiconductor device utilizing a metal insulating-film semiconductor field-effect transistor using a metallic semiconductor compound containing a metal and silicon and/or germanium as essential components as a gate electrode. SOLUTION: The semiconductor device contains a MIS field-effect transistor comprising at least a first transistor containing a first gate electrode having a composition shown by MA<SB>x</SB>and a second transistor containing a second gate electrode having a composition shown by MA<SB>y</SB>(in a formula, M represents at least one kind of a metallic element selected from a group composed of W, Mo, Ni, Pt, Ta, Pd, Co and Ti, A represents silicon and/or germanium, 0<x≤3 and 0<y≤3 is satisfied, and x and y differ from each other). COPYRIGHT: (C)2008,JPO&INPIT |
