发明名称 |
WIRING AND ELECTRODE FOR FLAT PANEL DISPLAY USING TFT TRANSISTOR FREE FROM THERMAL DEFECT GENERATION AND HAVING EXCELLENT ADHESIVENESS AND SPUTTERING TARGET FOR FORMING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a copper alloy thin film for forming a wiring and an electrode of a flat panel display using a TFT transistor and to provide a sputtering target for forming the thin film. SOLUTION: The wiring and the electrode for the flat panel display using the TFT transistor free from thermal defect generation and having excellent adhesiveness are composed of the copper alloy thin film having a composition containing 0.01 to 0.5 at.% Ag, 0.01 to 2.5 at% one or two or more of Mg, Al and Li in total and the rest including Cu and inevitable impurities. The sputtering target for forming them is also provided. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008203808(A) |
申请公布日期 |
2008.09.04 |
申请号 |
JP20070122274 |
申请日期 |
2007.05.07 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
MORI AKIRA;CHO SHUHIN;HAYASHI YOSHIMASA;MORI RIE |
分类号 |
G02F1/1368;C23C14/34;G09F9/30;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|