| 摘要 |
PROBLEM TO BE SOLVED: To deposit a film substantially on the same level from an imaging section to a peripheral circuit by reducing stepped portions on a boundary of the imaging section and the peripheral circuit, even if a wiring layer in the peripheral circuit of a solid-state imaging device is multilayered, and to prevent a dielectric breakdown without exposing a wiring pattern during the etch-back of an upper layer film to improve sensitivity characteristics. SOLUTION: The solid-state imaging device includes on a semiconductor substrate 1: an imaging section 10 including at least a photoelectric conversion section that generates signal charges based on an incident light; and a peripheral circuit section 20 that inputs/outputs signals and driving signals from/to the imaging section 10, both signals being generated by the signal charge, wherein the peripheral circuit 20 is formed in a place lower than the imaging section 10 of a semiconductor substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
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