MASK PATTERN CORRECTION METHOD, METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a mask pattern correction method with high dimensional accuracy using a scanning probe microscope.

SOLUTION: The mask pattern correction method includes the steps of: acquiring three-dimensional information of a first portion where no black defect is present in a pattern edge of a mask pattern 5 by using a scanning probe microscope; and correcting a second portion where a black defect 2 is present in the pattern edge of the mask pattern 1 based on the three-dimensional information by using the probe of the scanning probe microscope.

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