| 摘要 |
A single crystal nano wire array having heterojunction and a method for manufacturing the same are provided to set easily the line width of nano wires by adjusting dopant injection and thermal oxidation. Dopants are injected into a silicon substrate(300) so as to implement heterojunction. By executing thermal oxidation on the silicon substrate, a first thermal oxidation layer(305) is formed. By etching the first thermal oxidation layer, an oxidation film pattern is formed. By dry-etching the silicon substrate, a column structure is formed. By executing an isotropic wet etching on the column structure, a nano wire structure is formed. By executing thermal oxidation on the substrate, a second thermal oxidation layer is formed. By removing the second thermal oxidation layer, a released nano wire(325) is then formed. |
