METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

摘要

A method of manufacturing a photoelectric conversion device is provided to use a material with a low resistivity such as copper for a wire and to suppress defects of a semiconductor device by performing hydrogen supply without supplying to wiring a thermal history for long time and at high temperature. A method of manufacturing a photoelectric conversion device includes the steps of: forming an interlayer insulation layer(18,20) on a photoelectric conversion element and a transistor; forming a hole in a region of the interlayer insulation layer corresponding to an electrode of the transistor; burying a conductor in the hole; forming a hydrogen supply layer; performing a thermal process at a first temperature to supply a hydrogen from the hydrogen supply layer to a semiconductor substrate; forming a multi-layered connection structure using copper as a wiring material; and forming a passivation layer(24) covering the multi-layered connection structure. The transistor reads out a signal from the photoelectric element.