发明名称 Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby
摘要 A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.
申请公布号 US2008197512(A1) 申请公布日期 2008.08.21
申请号 US20060600687 申请日期 2006.11.16
申请人 STMICROELECTRONICS S.R.L. 发明人 MARCHI MAURO;FERRERA MARCO;RIVA CATERINA
分类号 H01L23/48;H01L21/4763;H01L23/00 主分类号 H01L23/48
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