| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress the frequency of wafer destruction by heating stress in an ultra high-speed anneal process. SOLUTION: In the method for manufacturing the semiconductor device, using an auxiliary heating source which complementarily heats a smaller region than the area of the main surface of a semiconductor substrate 31 from the backside of the main surface, while complementarily heating it so that the periphery portion is to be higher temperature than the central portion of the semiconductor substrate 31, a flush lamp light having the pulse width of 0.1 m second or more and 100 m second or less is irradiated to the main surface of the semiconductor substrate 31, heat treatment is carried out by the irradiation energy. COPYRIGHT: (C)2008,JPO&INPIT
|
