| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention relates to semiconductor materials based on metal oxides, particularly to homogeneous polycrystalline materials based on complex oxides of the class of diluted magnetic semiconductors. The invention can be used in spintronics. The semiconductor ferromagnetic material has paramagnetic state transition temperature Tk=470-520 K and is a solid solution oxides of zinc, aluminium or gallium, magnesium and iron having formula (ZnAl2O4)1-x(MgFe2O4)x or (ZnGa2O4)1-x(MgFe2O4)x, where x=0.01-0.10. ^ EFFECT: obtaining thermally stable material. ^ 6 dwg, 3 tbl, 4 ex |
