发明名称 PROCESS CHAMBER
摘要 A process chamber is provided to compensate for a distortion of a sheath boundary by horizontally forming the sheath boundary on a surface of a substrate. A process chamber includes a plate(100) and an upper ring(104). The plate is placed on a substrate. The upper ring is installed around the plate and has a main surface. A relative height between the main surface of the upper ring and a main surface of the plate is changed. The plate is fixed, while a height of the upper ring is adjustable. A ring lift pin(106) is connected to a lower portion of the upper ring to support the upper ring. The ring lift pin elevates the upper ring in upward and downward directions. At least two lift pins are connected to the upper ring. The lift pins are connected to the upper ring with a constant distance from each other.
申请公布号 KR20080075734(A) 申请公布日期 2008.08.19
申请号 KR20070015032 申请日期 2007.02.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JAE KYUNG;PARK, YOUNG KYOU;LEE, WON SOON;HUH, NO HYUN;KIM, BYONG DONG;MOON, AHN SIK
分类号 H01L21/3065;H01L21/687 主分类号 H01L21/3065
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