发明名称 |
Wafer processing apparatus and method |
摘要 |
An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.
|
申请公布号 |
US2008190558(A1) |
申请公布日期 |
2008.08.14 |
申请号 |
US20070825659 |
申请日期 |
2007.07.06 |
申请人 |
ACCRETECH USA, INC. |
发明人 |
BAILEY JOEL BRAD;HURET JEAN-MICHEL CLAUDE;FORDERHASE PAUL F.;SADAM SATISH;STRATTON SCOTT ALLEN;ROBBINS MICHAEL D. |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|