发明名称 |
METHOD FOR PRODUCING GROUP 3-5 COMPOUND SEMICONDUCTOR |
摘要 |
<p>Disclosed is a method for producing a group 3-5 compound semiconductor, which comprises a step wherein a group 3 raw material, a group 5 raw material, a carrier gas, and if necessary other raw materials are supplied into a furnace for growing a group 3-5 compound semiconductor on a substrate within the furnace by metal-organic vapor deposition. This method is characterized in that the group 3 raw material and the group 5 raw material are supplied into the furnace separately, and hydrogen halide is supplied into the furnace together with a carrier gas or a raw material other than the group 5 raw material.</p> |
申请公布号 |
WO2008093759(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
WO2008JP51465 |
申请日期 |
2008.01.24 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;TSUCHIDA, YOSHIHIKO;HATA, MASAHIKO |
发明人 |
TSUCHIDA, YOSHIHIKO;HATA, MASAHIKO |
分类号 |
C30B29/40;C23C16/34;C23C16/455;C30B29/38;H01L21/205 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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