| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid having a high CMP speed and excellent copper/tantalum polishing selectivity, also having less dishing, and increasing planarity of a polished surface. SOLUTION: The polishing liquid for metal is used for chemically mechanically polishing a conductor film made of copper or copper alloy in a semiconductor device manufacturing process. The polishing liquid contains a component of: (1) an amino acid derivative represented by general formula (I) (wherein, R<SP>1</SP>denotes an alkyl group of 1-4C); (2) colloidal silica in which at least some of silicon atoms on the surface are modified by aluminum atoms; and (3) an oxidizing agent. COPYRIGHT: (C)2008,JPO&INPIT |
