| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with transistors having the gates in a first and a second transistor formation region, respectively, wherein generation of uneven concave portions, caused by surface etching of a semiconductor substrate, can be prevented. SOLUTION: An insulation film IL is deposited on the semiconductor substrate SB. In the second transistor formation region R2, a metal film MG is formed, and then a silicon film SG and a hard mask film HM are deposited thereon, forming a multilayer film pattern MP, consisting of the hard mask film HM having the planar pattern of the gate and the silicon film SG. A first resist film PRi is so formed as to cover the first transistor formation region R1. In the second transistor formation region R2, the metal film MG is patterned with the hard mask HM of the multilayer film pattern MP as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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