发明名称 |
Sensor semiconductor package and fabrication |
摘要 |
A sensor semiconductor package and a fabrication method thereof are provided in the present application. The fabrication method comprises steps of: forming a plurality of grooves on a wafer between bond pads on active surfaces of every adjacent chips; forming metal layers in the grooves for electrically connecting with the bond pads of adjacent chips; thinning the non-active surfaces to expose the metal layers therefrom; forming a cover layer on the non-active surfaces with the metal layers are exposed therefrom; forming a solder resist layer on the covering layer and the conductive wirings with terminals of the conductive wirings are exposed therefrom; and cutting along cutting paths between every sensor chips to form a plurality of sensor semiconductor packages. Accordingly, the prior art problems such as misalignment of forming beveled grooves, concentrated stress and breakage can be solved.
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申请公布号 |
US2008185671(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20080011933 |
申请日期 |
2008.01.30 |
申请人 |
SILICONWARE PRECISION INDUCTRIES CO., LTD. |
发明人 |
HUANG CHIEN-PING;CHANG CHENG-YI;CHAN CHANG-YUEH |
分类号 |
H01L31/00;H01L21/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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