发明名称 |
METHOD OF TREATING POLYCRYSTALLINE LEAD SELENIDE INFRARED DETECTORS |
摘要 |
Method to process polycrystalline lead selenide infrared detectors consisting in: 1) Substrate preparation; 2) Metal deposition; 3) Metal delineation; 4) Sensor delineation; 5) PbSe deposition by thermal evaporation in vacuum; 6) Specific thermal treatment for sensitizing the active material; 7) Deposition of a pasivating layer on the active material. The method is superior to other techniques because permits to process single element detectors, multielement detectors with different geometries such as: linear arrays, 2-dimensional arrays, detectors on interference filters, multicolor arrays and devices monolithically integrated with a ROIC. Applications include low cost infrared detectors for process control, gas analysis, defense, temperature measurement etc. |
申请公布号 |
EP1852920(B1) |
申请公布日期 |
2008.08.06 |
申请号 |
EP20040821380 |
申请日期 |
2004.12.29 |
申请人 |
MINISTERIO DE DEFENSA |
发明人 |
VERGARA OGANDO, GERMAN;ALMAZAN CARNEROS, ROSA;GOMEZ ZAZO, LUIS JORGE;VERDU HERCE , MARINA;RODRIGUEZ FERNANDEZ, PURIFICACION;MONTOJO SUPERVIELLE, MARIA TERESA |
分类号 |
H01L31/18;H01L27/14 |
主分类号 |
H01L31/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|