发明名称 METHOD OF TREATING POLYCRYSTALLINE LEAD SELENIDE INFRARED DETECTORS
摘要 Method to process polycrystalline lead selenide infrared detectors consisting in: 1) Substrate preparation; 2) Metal deposition; 3) Metal delineation; 4) Sensor delineation; 5) PbSe deposition by thermal evaporation in vacuum; 6) Specific thermal treatment for sensitizing the active material; 7) Deposition of a pasivating layer on the active material. The method is superior to other techniques because permits to process single element detectors, multielement detectors with different geometries such as: linear arrays, 2-dimensional arrays, detectors on interference filters, multicolor arrays and devices monolithically integrated with a ROIC. Applications include low cost infrared detectors for process control, gas analysis, defense, temperature measurement etc.
申请公布号 EP1852920(B1) 申请公布日期 2008.08.06
申请号 EP20040821380 申请日期 2004.12.29
申请人 MINISTERIO DE DEFENSA 发明人 VERGARA OGANDO, GERMAN;ALMAZAN CARNEROS, ROSA;GOMEZ ZAZO, LUIS JORGE;VERDU HERCE , MARINA;RODRIGUEZ FERNANDEZ, PURIFICACION;MONTOJO SUPERVIELLE, MARIA TERESA
分类号 H01L31/18;H01L27/14 主分类号 H01L31/18
代理机构 代理人
主权项
地址