| 摘要 |
<p>A method for manufacturing a photo mask is provided to reduce pattern defects by preventing a pollutant from being transferred to a pattern on a wafer. A phase shift layer(102) is formed on a substrate(100). A shield layer(104) is formed on the phase shift layer. The shield layer and the phase shift layer are patterned. The shield layer except for a shield region is removed. A surface of the resultant structure on the substrate is converted into a hydrophobic state. The phase shift layer is made of molybdenum silicon nitride(MoSiN). The shield layer is made of chrome(Cr). When the surface of the substrate is converted into the hydrophobic state, a plasma treatment process is performed on the resultant structure on the substrate. Plasma includes hydrogen(H). The plasma is mixed gas plasma of CHF3, CF4, and H2. A flux of the hydrogen in plasma is 20 sccm.</p> |
