| 摘要 |
<P>PROBLEM TO BE SOLVED: To make the backside of a substrate flat during exposure treatment in order to perform exposure treatment while holding the substrate horizontal. <P>SOLUTION: During photolithography treatment of a wafer W, exposure treatment of the wafer W is performed (step S7) immediately after removal of the coating film on the backside of the wafer W is performed (step S6), and a coating film is formed on the backside of the wafer W immediately after the exposure treatment (step S8). Etching treatment, and the like, are then performed (step S9-S11) and a series of these treatment steps (steps S6-S11) are repeated a predetermined number of times. Since a coating film is formed on the backside of the wafer W during etching treatment, the backside of the wafer W itself is protected by the coating film and not scratched even if a minute scratch is made in the coating film. Furthermore, since the coating film on the backside of the wafer W is removed immediately before exposure treatment, the backside of the wafer W can be made flat during exposure treatment. <P>COPYRIGHT: (C)2008,JPO&INPIT |
