| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device, the method preventing a roughness from occurring on the backside of a semiconductor substrate. SOLUTION: The method of fabricating the semiconductor device includes steps of: forming semiconductor elements on the semiconductor substrate 1; forming an interlayer dielectric, a distributing layer, and a pad 11a on the semiconductor device 1; forming a passivation film 12a on the pad 11a; forming an opening 12c located on the pad 11a by etching the passivation film 12a with a resist pattern 50 as a mask; and removing the resist pattern 50 with an chemical that contains an organic amine, wherein a silicon film 24 is formed on the backside of the semiconductor substrate 1 in the step for forming the semiconductor device, and silicon film 24 is exposed after the step of forming the pad 11a. The method also includes a step of forming an oxide film 24b on a surface of the silicon film 24 after the step of forming the pad 11a and before the step of removing the resist pattern 50. COPYRIGHT: (C)2008,JPO&INPIT |
