| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance element having a high MR ratio, while being low in RA, and to provide an apparatus for manufacturing the magnetoresistance element. SOLUTION: The magnetoresistance element which has an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer has a step of forming the first ferromagnetic layer, a step of forming the MgO layer, and a step of forming the second ferromagnetic layer. The step of forming the MgO layer is performed under the condition that a substrate be at a floating voltage potential. Moreover, the step of forming the MgO layer may be performed, by placing the substrate to a substrate placing stage in which a part close to the substrate is an insulator. Moreover, the step of forming the MgO layer may be performed under the condition that the substrate be electrically insulated from a substrate holding part which holds the substrate. COPYRIGHT: (C)2008,JPO&INPIT
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