<p>In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.</p>
申请公布号
EP1946371(A2)
申请公布日期
2008.07.23
申请号
EP20060819175
申请日期
2006.10.27
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HSU, LOUIS, LU-CHEN;MANDELMAN, JACK;TONTI, WILLIAM
