Method of forming the nanoscale conductive structure and a semiconductor device formed thereby

摘要

A method of forming a nanoscale structure includes providing a substrate having a first layer thereon, the first layer having an opening that exposes a region of the substrate, and contacting the substrate with a catalytic material, wherein the exposed region of the substrate has a first property that attracts the catalytic material, and the first layer has a second property that repels the catalytic material.