发明名称 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE
摘要 A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
申请公布号 US2008153311(A1) 申请公布日期 2008.06.26
申请号 US20080042829 申请日期 2008.03.05
申请人 PADHI DEENESH;HA HYOUNG-CHAN;RATHI SUDHA;WITTY DEREK R;CHAN CHIU;PARK SOHYUN;BALASUBRAMANIAN GANESH;JANAKIRAMAN KARTHIK;SEAMONS MARTIN JAY;SIVARAMAKRISHNAN VISWESWAREN;KIM BOK HOEN;M SAAD HICHEM 发明人 PADHI DEENESH;HA HYOUNG-CHAN;RATHI SUDHA;WITTY DEREK R.;CHAN CHIU;PARK SOHYUN;BALASUBRAMANIAN GANESH;JANAKIRAMAN KARTHIK;SEAMONS MARTIN JAY;SIVARAMAKRISHNAN VISWESWAREN;KIM BOK HOEN;M'SAAD HICHEM
分类号 H01L21/31 主分类号 H01L21/31
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