| 摘要 |
According to the present invention, a semiconductor process for butting contact comprises: providing a substrate on which are formed two adjacent transistor gates; implanting a full area between the two adjacent transistor gates by a tilt angle, to form a lightly doped region of a first conductivity type; forming a heavily doped region of the first conductivity type and a heavily doped region of a second conductivity type in the area between the two adjacent transistor gates, in which the heavily doped region of the second conductivity type overrides the lightly doped region of the first conductivity type, and divides the heavily doped region of the first conductivity type into two areas; depositing a dielectric layer; and forming a butting contact in the dielectric layer which concurrently contacts the two divided heavily doped regions of the first conductivity type.
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