| 摘要 |
A method for serially polishing a plurality of semiconductor wafers, wherein a CMP apparatus having a first polishing pad and a second polishing pad is provided. A first slurry composition is disposed between the first polishing pad and a first wafer when the first wafer is in a first state, and a first polishing on the first wafer via the first polishing pad and first slurry composition is commenced at a first commencement time. A second slurry composition is disposed between the second polishing pad and a second wafer when the second wafer is in a second state, and a second polishing on the second wafer via the second polishing pad and second slurry is commenced at a second commencement time, wherein the second commencement time differs from the first commencement time by a first intermediate period. One or more of the first wafer and the second wafer is rinsed with a pre-rinse agent for at least a portion of the first intermediate period. The first polishing and second polishing are halted at substantially the same end time, therein placing the first wafer in the second state and the second wafer in a third state.
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