PROCESS FOR REMOVING A RESIDUE FOR SILICIDE PROCESS

摘要

A residue removing process for a silicide process is provided to increase residue removal efficiency of a wafer in a final cleaning process by lifting off or isolating the residue on a wafer having undergone an etch process or an ion implantation process prior to a final cleaning process. Photoresist remaining on a wafer is stripped in an ashing process(S10). The residue having undergone the ashing process is firstly removed by using chemicals in a previous cleaning process(S20). The wafer having undergone the previous cleaning process is cleaned by using SC1(standard clean 1)(S30). The wafer having undergone the SC1 cleaning process is cleaned by using HF(hydrofluoric acid)(S40). HF can be used in the previous cleaning process.