| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor configuration comprising a triple gate finFET and a double gate finFET both of which have different vertical dimensions, and to provide a method of fabricating the same. SOLUTION: Implant species comprising germanium is implanted in a bottom portion 33 of selected semiconductor fins 13' on which reduced vertical dimension is desired. The bottom portion 33 of the selected semiconductor fins 13' with implant species is selectively etched to a semiconductor material without the implanted species, that is, the semiconductor material in the top portion 23 of the semiconductor fin and other semiconductor fins 13 without the implanted species, thereby obtaining: finFETs with the full vertical dimension fins and a high on-current; and finFETs with reduced vertical dimension fins with a low on-current, on the same semiconductor substrate. By adjusting the depth of the implant species, the vertical dimension of the semiconductor fins can be adjusted in selected finFETs. COPYRIGHT: (C)2008,JPO&INPIT
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