发明名称 Manufacturing Method of Semiconductor Device
摘要 Illumination devices ( 7 a) and ( 7 b) which irradiate light having a wavelength of 1.1 mum or less are arranged on a front surface and a rear surface of a cover ( 8 ) of a dicing device ( 1 ). After a wafer is placed on a dicing stage ( 3 ), when the wafer is diced by a blade ( 4 a) attached to a spindle ( 5 ), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices ( 7 a) and ( 7 b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle ( 5 ) or the like is not present on the wafer.
申请公布号 US2008138962(A1) 申请公布日期 2008.06.12
申请号 US20040632993 申请日期 2004.07.22
申请人 RENESAS TECHNOLOGY CORP. 发明人 SATO TAKASHI;TAKANO JUNICHI;SATO TAKASHI;NAITOU TOKUO
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址