| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND LASER MACHINING DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing technique of a semiconductor device for simplifying a lithography step using a photoresist in a manufacturing process of the semiconductor device, to reduce a manufacturing cost and to improve throughput. <P>SOLUTION: An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008135717(A) |
申请公布日期 |
2008.06.12 |
| 申请号 |
JP20070268751 |
申请日期 |
2007.10.16 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA KOICHIRO;YAMAZAKI SHUNPEI |
| 分类号 |
H01L21/768;B23K26/06;B23K26/067;B23K26/38;B23K26/40;B23K101/40;G09F9/00;H01L21/28;H01L21/302;H01L21/336;H01L29/786 |
主分类号 |
H01L21/768 |
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