| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode structure which can enhance the light retriev ing efficiency of a semiconductor light emitting element, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the electrode structure comprises steps of: sequentially laminating a roughness preventive layer 1, a contact layer 2, a first barrier layer 3, a second barrier layer 4, and a bonding pad layer 5 on the surface of an N-type AlGaAs semiconductor clad layer 10; sequentially pattern processing the layer 5, the second layer 4, the first layer 3, the layer 2, and the layer 1 by wet etching; and then heat treating to alloy the layer 2 with the layer 10 via the layer 1. The area of the alloyed part falls within a predetermined range since the thickness of the layer 1 laminated on the surface of the layer 10 is set to a range of 30 to 50 nm. <P>COPYRIGHT: (C)2004,JPO |
