Vertical semiconductor structure and method of fabrication

摘要

The semiconductor structure has a main electrode (22) and another main electrode (23), which are arranged on two facing main surfaces of a semiconductor assembly made of silicon carbide. The semiconductor assembly has a substrate (11), an epitaxial layer (12) arranged on the substrate with interchangeable sequence, embedded gate area (19), vertical channel areas (20) and another epitaxial layer (13) arranged on the former epitaxial layer. A trench shaped recess (15) is provided on an interface (14) between both the epitaxial layers in former epitaxial layer. An independent claim is also included for a method for manufacturing a semiconductor structure.