METHOD OF MANUFACTURING AN INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

A method for fabricating an insulated gate field effect transistor (20) comprising an gate dielectric layer (24) between a gate electrode (23) and a semiconductor substrate (21), wherein the gate electrode (24) is at least partially disposed within a recess (22) formed within the substrate (21), the 5 recess (22) extending between a source region (25) and a drain region (26) of the transistor (20).