发明名称 |
SYSTEMS, METHODS, AND APPARATUSES FOR HIGH POWER COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ANTENNA SWITCHES USING BODY SWITCHTING AND SUBSTRATE JUNCTION DIODE CONTROLLING IN MULTISTACKING STRUCTURE |
摘要 |
A system, a method, and an apparatus for a high power complementary metal oxide semiconductor antenna switch using body switching and substrate junction diode control in a multi-stacking structure are provided to offer high power processing capability in a multi-band operation of a CMOS(Complementary Metal Oxide Semiconductor) RF(Radio Frequency) switch. A CMOS antenna switch includes an antenna, a transmission switch, and a reception switch(404). The antenna operates at a plurality of radio frequency bands. The transmission switch communicates with the antenna. The reception switch communicates with the antenna. The reception switch includes a first transistor(408) and a second transistor(410). The first transistor includes a first source(408a), a first drain(408c), and a first body substrate(408d). The second transistor includes a second source(410a), a second drain(410c), and a second body substrate(410d). The first body substrate is electrically connected to the first source or the first drain. The second body substrate is selectively connected between a resistance and a ground.
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申请公布号 |
KR20080050325(A) |
申请公布日期 |
2008.06.05 |
申请号 |
KR20070122536 |
申请日期 |
2007.11.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
AHN, MIN SIK;LEE, CHANG HO;CHANG, JAE JOON;WOO, WANG MYONG;KIM, HAK SUN;LASKAR JOY |
分类号 |
H01H36/00;H01Q1/24 |
主分类号 |
H01H36/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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