发明名称 ORGANIC THIN FILM TRANSISTOR, ORGANIC COMPOSITE ELECTRONIC ELEMENT, METHOD FOR MANUFACTURING SUCH TRANSISTOR AND ELEMENT, AND DISPLAY DEVICE AND MEMORY
摘要 An organic thin film transistor is provided with a gate electrode (18), a gate insulating film (17), an organic semiconductor film (16), a drain electrode (14) and a source electrode (15) on a substrate (11). The gate insulating film (17) has a double layer structure of a low dielectric constant film (17a) and a ferroelectric film (17b). The low dielectric constant film (17a) is arranged between the ferroelectric film (17b) and the organic semiconductor film (16), and the low dielectric constant film (17a) includes an organic polymeric compound which does not have a functional group that has an unshared electron pair nor p electron coupling within the molecular structure.
申请公布号 WO2008065927(A1) 申请公布日期 2008.06.05
申请号 WO2007JP72424 申请日期 2007.11.20
申请人 ZEON CORPORATION;IWATE UNIVERSITY;BABA, MAMORU;YE, RONGBIN;KATOH, TAKEYOSHI 发明人 BABA, MAMORU;YE, RONGBIN;KATOH, TAKEYOSHI
分类号 H01L29/786;H01L21/336;H01L21/8242;H01L27/108;H01L51/05 主分类号 H01L29/786
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