FILM FORMING METHOD, FILM FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE

摘要

A film forming method is provided with a step of placing a substrate on a placing section in a processing chamber; a step of supplying inside the processing chamber with a gas to be excited by microwaves for generating plasma; a step of vacuum-exhausting inside the processing chamber; and a step of supplying inside the processing chamber with C<SUB>5</SUB>F<SUB>8</SUB> gas. The gas inside the processing chamber is brought into the plasma state by supplying inside the processing chamber with microwaves from a planar antenna member, which is arranged on an upper part of the processing chamber to face the placing section and has many slits along the circumference direction, and a fluorine-added carbon film is formed on the substrate with the gas brought into the plasma state. High frequency power is applied to the placing section while forming the fluorine-added carbon film on the substrate so that a biasing high frequency power of 0.32W/cm<SUP>2</SUP> or less is applied on the substrate per unit area.