| 摘要 |
Disclosed herein is a method for manufacturing a semiconductor device, the method including the step of forming a gate electrode that contains a metal over a semiconductor substrate with intermediary of a gate insulating film, the step including the sub-steps of, forming a first gate electrode layer that defines a work function of the gate electrode on the gate insulating film, forming a second gate electrode layer that has a barrier property for underlayers on the first gate electrode layer, and forming a third gate electrode layer of which resistance is lower than a resistance of the first gate electrode layer on the second gate electrode layer by chemical vapor deposition.
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